1 ELM32434LA-S general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-case rjc 2.5 c /w maximum junction-to-ambient rja 62.5 c /w parameter symbol limit unit note drain-source voltage vds 600 v gate-source voltage vgs 30 v continuous drain current ta=25c id 2.0 a 4 ta=100c 1.1 pulsed drain current idm 7 a 3, 4 avalanche current ias 2.4 a 5 avalanche energy l=10mh eas 29 mj 5 power dissipation ta=25c pd 50 w ta=100c 20 junction and storage temperature range tj, tstg -55 to 150 c ELM32434LA-S uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=600v ? id=2a ? rds(on) < 4.4 (vgs=10v) 6 - single n-channel mosfet pin no. pin name 1 gate 2 drain 3 source pin configuration circuit to-252-3(top view) s g d 1 3 2 t a b
2 ELM32434LA-S electrical characteristics ta=25 c parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 600 v zero gate voltage drain current idss vds=600v, vgs= 0v, ta=25c 25 a vds=600v, vgs= 0v, ta=100c 250 gate-body leakage current igss vds=0v, vgs= 30v 100 na gate threshold voltage vgs(th) vds=vgs, id=250 a 2.5 4.5 v static drain-source on-resistance rds(on) vgs=10v, id= 1a 3.7 4.4 1 forward transconductance gfs vds=10v, id= 1a 1.9 s 1 diode forward voltage vsd if=2a, vgs=0v 1.5 v 1 max. body -diode continuous current is 2 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=15v, f=1mhz 342 pf output capacitance coss 47 pf reverse transfer capacitance crss 6 pf switching parameters total gate charge qg vgs=10v, vds=300v, id=1.2a 7.8 nc 2 gate-source charge qgs 3.1 nc 2 gate-drain charge qgd 2.3 nc 2 turn - on delay time td(on) vds=300v, id = 2a, rgen=25 15 ns 2 turn - on rise time tr 30 ns 2 turn - off delay time td(off) 28 ns 2 turn - off fall time tf 36 ns 2 body diode reverse recovery time trr if = 2a, di/dt =100a/ s 780 ns body diode reverse recovery charge qrr vgs=0v 3.8 c 6 - single n-channel mosfet note : 1. pulse test : pulsed width 300sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. limited only by maximum temperature allowed. 5. vdd=60v, starting tj=25 c.
3 typical electrical and thermal characteristics rev 0.9 3 mar-23-2009 n-channel enhancement mode field effect transistor p0260ad to-252 halogen-free & lead-free niko-sem out p ut characteristics source-drain diode forward voltage 0 2 4 6 8 10 0 2 4 i d =1.2a v ds =300v 6 8 100 10 1 c rss c oss c iss v g s = 0v , f= 1 m h z 0 60 120 180 240 300 360 420 0 t j = - 20c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 t j =25c 1 2 3 4 5 transfer characteristics t j =125c t j =150 c t j =25 c 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 i d , drain-to-source current(a) i d , drain-to-source current(a) v gs , gate-to-source voltage(v) v ds , drain-to-source voltage(v) on-resistance vs temperature r ds(on) on-resistance(ohm) t j , junction temperature( ? c) ca p acitance characteristic c , capacitance(pf) v ds , drain-to-source voltage(v) gate charge characteristics qg , total gate charge v gs , gate-to-source voltage(v) v sd , source-to-drain voltage(v) i s , source current(a) - 50 - 25 0 25 50 75 100 125 150 r ds(on) x 0.2 v gs = 10v ds(on) x 0.6 ds(on) x 1.0 ds(on) x 1.4 ds(on) x 1.8 ds(on) x 2.2 ds(on) x 2.6 i d = 1a 0 0 0.5 1.0 1.5 2.0 2.5 v gs = 4.5v r r r r r r v gs = 5v 4 8 12 16 20 v gs = 6v v gs = 10v ELM32434LA-S 6 - single n-channel mosfet
4 rev 0.9 4 mar-23-2009 n-channel enhancement mode field effect transistor p0260ad to-252 halogen-free & lead-free niko-sem 0 500 1000 1500 2000 2500 3000 3500 0.0001 0.001 0.01 0.1 1 10 single pulse r ? jc = 2.5 ? c/w t c =25 ? c 1ms 1s dc 100m s 10m s 0.01 0.1 1 10 10 100 1000 note : 1.v gs = 10v 2.t c =25 ? c 3.r ? jc = 2.5 ? c/w 4.single pulse operation in this area is lim ited by r ds(on) ? i d , drain current(a) safe operating area single pulse maximum power dissipation power(w) single pulse time(s) v ds , drain-to-source voltage(v) transient thermal res p onse curve r(t) , normalized effective transient thermal resistance t 1 , square wave pulse duration[sec] ELM32434LA-S 6 - single n-channel mosfet
5 rev 0.9 5 mar-23-2009 n-channel enhancement mode field effect transistor p0260ad to-252 halogen-free & lead-free niko-sem figure 1 figure 2 figure 3 figure 4 figure 5 figure 6 ELM32434LA-S 6 - single n-channel mosfet
6 rev 0.9 6 mar-23-2009 n-channel enhancement mode field effect transistor p0260ad to-252 halogen-free & lead-free niko-sem figure 7 figure 8 ELM32434LA-S 6 - single n-channel mosfet
|
